Ion Implantation Synthesis of Silicon Carbide
Date of Graduation
Master of Science in Materials Science
Physics, Astronomy and Materials Science
Materials Science and Engineering
Silicon wafers with 200A of carbon deposited on the surface were implanted with 50 keV N⁺ ions at a dose of 1x10¹⁶ ions/cm² at room temperature. The implanted samples were cut to several pieces and annealed in vacuum (at a pressure of 5x10⁻⁸ torr) at temperatures of 800°C and 900°C, and inert gas at a temperature of 1000°C for 30 minutes. RBS analysis shows that after implantation carbon is distributed in the range of 0 to 1000A beneath the silicon surface, and the silicon substrate shows a disordered range of about 1400A. Carbon atoms follow an apparent Gaussian distribution in silicon substrate that is consistent with the theoretical predictions. After annealing, a buried or near surface silicon carbide grains in host silicon matrix was formed, and the disordered range narrowed. A maximum C/Si ratio of about 0.2 or less was measured for all the samples.
© Yubao Wang
Wang, Yubao, "Ion Implantation Synthesis of Silicon Carbide" (1999). MSU Graduate Theses. 836.