Highly conducting and transparent tin-doped CdO thin films for optoelectronic applications

R. K. Gupta, Missouri State University
K. Ghosh, Missouri State University
R. Patel, MSU JVIC-CASE
S. R. Mishra
P. K. Kahol, Missouri State University

Abstract

Highly conducting and transparent thin films of tin-doped cadmium oxide were deposited on quartz substrate using pulsed laser deposition technique. The effect of growth temperature on structural, optical and electrical properties was studied. These films are highly transparent (78-89%) in visible region, and transmittance of the films depends on growth temperature. It is observed that resistivity increases with growth temperature after attaining minimum at 150 °C, while carrier concentration continuously decreases with temperature. The lowest resistivity of 1.96 × 10- 5 Ω cm and carrier concentration of 5.52 × 1021 cm3 is observed for the film grown at 150 °C. These highly conducting and transparent tin-doped CdO thin films grown via pulsed laser deposition could be an excellent candidate for future optoelectronic applications.