Highly conducting and transparent multilayer films based on ZnO and Mo-doped indium oxide for optoelectronic applications
Highly conducting and transparent multilayer films based on zinc oxide/molybdenum- doped indium oxide/zinc oxide (ZnO/IMO/ZnO) were deposited on quartz substrate by pulsed laser deposition technique. The effect of ZnO and IMO thickness on structural, optical, and electrical properties is studied. It is observed that these films are highly oriented along (002) and (222) direction for ZnO and IMO films respectively. The transparency of multilayer films is over 86%. The bandgap of these films depends on thickness of different layers and is in range of 3.20 eV-3.63 eV. The low resistivity (5.70×10-5 Ω.cm), high carrier concentration (4.53×1020 cm -3), high mobility (242 cm2V-1s-1), and wide bandgap make these multilayers suitable of optoelectronic applications.
Physics, Astronomy, and Materials Science
Multilayer, Optical property, Pulsed laser, Semiconductor, Zinc oxide
Gupta, R. K., K. Ghosh, R. Patel, and P. K. Kahol. "Highly conducting and transparent multilayer films based on ZnO and Mo-doped indium oxide for optoelectronic applications." Optoelectronics and Advanced Materials, Rapid Communications 2, no. 12 (2008): 792-795.
Optoelectronics and Advanced Materials, Rapid Communications