Wide bandgap Mg-doped ZnAlO thin films for optoelectronic applications
Magnesium-doped ZnAlO thin films were grown on quartz substrate by ablating the sintered target with a KrF excimer laser. The effect of growth temperature from 30 °C to 700 °C on structural, optical, and electrical properties has been studied. These films are highly transparent in visible spectrum with average transmittance of 82%. The films grown at low temperature are amorphous while films grown at high temperature are crystalline in nature. These films are highly oriented along (0 0 2) direction. The electrical conductivity, carrier concentration, and electron mobility is found to increase with increase in temperature and then decreases with further increase in temperature. The bandgap is found to vary from 3.86 eV to 4.00 eV for various films.
Physics, Astronomy, and Materials Science
Electrical properties, Magnesium oxide, Optical properties, Thin films, Zinc oxide
Gupta, R. K., K. Ghosh, R. Patel, and P. K. Kahol. "Wide bandgap Mg-doped ZnAlO thin films for optoelectronic applications." Materials Science and Engineering: B 156, no. 1-3 (2009): 1-5.
Materials Science and Engineering B: Solid-State Materials for Advanced Technology