In this study, we synthesize high quality vertically aligned ZnO (VAZO) nanorods on silicon, sapphire, and indium tin oxide (ITO) substrates by using pulsed laser deposition (PLD) technique at high growth pressure (0.3 Torr). Systematic changes in structural and optical properties of VAZO nanorods are studied by varying the substrate temperature (500–600 °C) and number of pulsed laser shots during the deposition. ZnO nanoparticles deposited at high pressure act as nucleation sites, eliminating requirement of catalyst to fabricate VAZO nanorods. Two sharp ZnO peaks with high intensity correspond to the (0002) and (0004) planes in X-ray diffraction pattern confirm the growth of ZnO nanorods, oriented along the c-axis. Scanning Electron Microscopy (SEM) images indicate a regular arrangement of vertically aligned hexagonal closed pack nano-structures of ZnO. The vertical alignment of ZnO nanorods is also supported by the presence of E2 (high) and A1 (LO) modes in Raman spectra. We can tune the diameter of VAZO nanorods by changing growth temperature and annealing environments. Photoluminescence spectroscopy illustrates reduction in defect level peak intensities with increase in diameter of VAZO nanorods. This study signifies that high pressure PLD technique can be used more efficiently for controlled and efficient growth of VAZO nanorods on different substrates.


Physics, Astronomy, and Materials Science

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© 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).


Defects, Optoelectronics, Oxide semiconductors, Photoluminescence, Pulsed laser deposition, Raman spectroscopy, ZnO nanostructures

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