High mobility Ti-doped In2O3 transparent conductive thin films

Abstract

Highly conducting and transparent titanium (Ti)-doped indium oxide (In2O3) films were deposited on sapphire substrate by ablating the sintered In2O3 target containing 1-10 wt.% TiO2 with a KrF excimer laser (λ = 248 nm and pulsed duration of 20 ns). The effect of growth temperature from room temperature to 600 °C and oxygen pressure (1.0 × 10- 4-2.5 × 10- 7 bar) has been studied by analyzing structural, optical, and electrical properties of these films. The conductivity, carrier concentration and mobility of the films grown at 600 °C are 10,858 S cm- 1, 4.3 × 1020 cm- 3 and 159 cm2 V- 1 s- 1 respectively. This is the highest mobility ever obtained in doped In2O3 films.

Department(s)

JVIC-Center for Biomedical and Life Sciences
Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/j.matlet.2007.07.052

Keywords

Electrical properties, Indium oxide, Optical materials and properties, Semiconductor, Thin films, Titanium

Publication Date

3-15-2008

Journal Title

Materials Letters

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