High mobility Ti-doped In2O3 transparent conductive thin films
Highly conducting and transparent titanium (Ti)-doped indium oxide (In2O3) films were deposited on sapphire substrate by ablating the sintered In2O3 target containing 1-10 wt.% TiO2 with a KrF excimer laser (λ = 248 nm and pulsed duration of 20 ns). The effect of growth temperature from room temperature to 600 °C and oxygen pressure (1.0 × 10- 4-2.5 × 10- 7 bar) has been studied by analyzing structural, optical, and electrical properties of these films. The conductivity, carrier concentration and mobility of the films grown at 600 °C are 10,858 S cm- 1, 4.3 × 1020 cm- 3 and 159 cm2 V- 1 s- 1 respectively. This is the highest mobility ever obtained in doped In2O3 films.
Physics, Astronomy, and Materials Science
Electrical properties, Indium oxide, Optical materials and properties, Semiconductor, Thin films, Titanium
Gupta, R. K., K. Ghosh, S. R. Mishra, and P. K. Kahol. "High mobility Ti-doped In2O3 transparent conductive thin films." Materials Letters 62, no. 6-7 (2008): 1033-1035.