Title

High mobility W-doped In 2 O 3 thin films: Effect of growth temperature and oxygen pressure on structural, electrical and optical properties

Abstract

Highly conducting and transparent thin films of tungsten (W)-doped indium oxide were obtained using pulsed laser deposition to study the effect of growth temperature and oxygen pressure on structural, optical and electrical properties. The transparency of the films is seen to largely depend on the growth temperature. The electrical properties, however, are found to depend strongly on both the growth temperature and the oxygen pressure. High mobility (up to 358 cm 2 V -1 s -1 ), low resistivity (1.1 × 10 -4 Ω cm), and relatively high transmittance (∼90%) tungsten-doped indium oxide films have been prepared at a growth temperature of 500 °C and an oxygen pressure of 1 × 10 -6 bar.

Department(s)

JVIC-CASE
Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/j.apsusc.2007.07.146

Keywords

Electrical properties, Indium oxide, Optical materials and properties, Semiconductor, Thin films, Tungsten

Publication Date

1-15-2008

Journal Title

Applied Surface Science

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