High mobility W-doped In 2 O 3 thin films: Effect of growth temperature and oxygen pressure on structural, electrical and optical properties
Abstract
Highly conducting and transparent thin films of tungsten (W)-doped indium oxide were obtained using pulsed laser deposition to study the effect of growth temperature and oxygen pressure on structural, optical and electrical properties. The transparency of the films is seen to largely depend on the growth temperature. The electrical properties, however, are found to depend strongly on both the growth temperature and the oxygen pressure. High mobility (up to 358 cm 2 V -1 s -1 ), low resistivity (1.1 × 10 -4 Ω cm), and relatively high transmittance (∼90%) tungsten-doped indium oxide films have been prepared at a growth temperature of 500 °C and an oxygen pressure of 1 × 10 -6 bar.
Department(s)
JVIC-Center for Biomedical and Life Sciences
Physics, Astronomy, and Materials Science
Document Type
Article
DOI
https://doi.org/10.1016/j.apsusc.2007.07.146
Keywords
Electrical properties, Indium oxide, Optical materials and properties, Semiconductor, Thin films, Tungsten
Publication Date
1-15-2008
Recommended Citation
Gupta, R. K., K. Ghosh, S. R. Mishra, and P. K. Kahol. "High mobility W-doped In2O3 thin films: Effect of growth temperature and oxygen pressure on structural, electrical and optical properties." Applied Surface Science 254, no. 6 (2008): 1661-1665.
Journal Title
Applied Surface Science
