Opto-electrical properties of Ti-doped In 2 O 3 thin films grown by pulsed laser deposition
By ablating titanium containing In 2 O 3 target with a KrF excimer laser, highly conducting and transparent films on quartz were obtained to investigate the effects of growth temperature and oxygen pressure on the structural, optical and electrical properties of these films. We find that the transparency of the films depends more on the growth temperature and less on the oxygen pressure. Electrical properties, however, are found to be sensitive to both the growth temperature and oxygen pressure. We report in this paper that a growth temperature of 500 °C and an oxygen pressure of 7.5 × 10 -7 bar lead to titanium-doped indium oxide films which have high mobility (up to 199 cm 2 V -1 s -1 ), low resistivity (9.8 × 10 -5 Ω cm), and relatively high transmittance (∼88%).
Physics, Astronomy, and Materials Science
Electrical properties, Indium oxide, Optical materials and properties, Semiconductor, Thin films, Titanium
Gupta, R. K., K. Ghosh, S. R. Mishra, and P. K. Kahol. "Opto-electrical properties of Ti-doped In2O3 thin films grown by pulsed laser deposition." Applied surface science 253, no. 24 (2007): 9422-9425.
Applied Surface Science