Effect of growth temperature on structural and magneto-transport properties of Co-doped In2O3 diluted magnetic semiconductors
Recently, Diluted magnetic semiconductors (DMS) based on transition metal oxides have attracted considerable attention due to their potential applications in spintronic devices. In2O3 is a wideband gap semiconductor with unique optical and electrical properties. The high conductivity of In2O3 is due to presence of interstitial oxygen vacancy. By doping with the transition metal such as cobalt, the possibility of room temperature ferromagnetism is expected. Thin films of Co-doped In2O3 diluted magnetic semiconductor have been grown on c-plane sapphire single crystals using pulsed laser deposition technique. Diffei characterizations such as x-ray diffraction, atomic force microscopy, and magneto-transport have been carried out to study the effect of growth temperature on the structural, electrical, and magnetic properties of these films. The films grown at high temperature have preferred Orientation along (222) direction, while films grown at low temperature show amorphous nature. It is observed that electrical properties of the films strongly depend on growth temperature. The resistivity of the films decreases with increase in growth temperature. On the other hand, mobility of the films increases with increase in growth temperature. This could be due to improvement in crystallinity of the films.
JVIC-Center for Biomedical and Life Sciences
Physics, Astronomy, and Materials Science
Ghosh, A, R K Gupta, P K Kahol, and K Ghosh. “Effect of Growth Temperature on Structural and Magneto-Transport Properties of Co-Doped In2O3 Diluted Magnetic Semiconductors.” MRS Proceedings 1119 (2008): 1119–L05-13.
Materials Research Society Symposium Proceedings