Effects of annealing on donor and acceptor concentrations in Ga-doped ZnO thin films
Temperature-dependent Hall-effect measurements have been performed on three Ga- doped ZnO thin films of various thicknesses (65, 177, and 283 nm), grown by pulsed laser deposition at 400 °C and annealed at 400 °C for 10 min in Ar, N2, or forming-gas (5% H2 in Ar). The donor N D and acceptor NA concentrations as a function of sample thickness and annealing conditions are determined by a new formalism that involves only ionized-impurity and boundary scattering. Before annealing, the samples are highly compensated, with ND = (2.8 ± 0.3) × 1020 cm-3 and NA = (2.6 ± 0.2) × 1020 cm-3. After annealing in Ar the samples are less compensated, with ND = 3.7 ± 0.1 × 1020 cm-3 and NA = 2.0 ± 0.1 × 1020 cm-3 furthermore, these quantities are nearly independent of thickness. However, after annealing in N2 and forming-gas, N D and NA are thickness dependent, partly due to depth-dependent diffusion of N2 and H, respectively.
Physics, Astronomy, and Materials Science
Look, David C., Kartik Ghosh, and Kevin D. Leedy. "Effects of annealing on donor and acceptor concentrations in Ga-doped ZnO thin films." MRS Online Proceedings Library 1201, no. 1 (2009): 57-64.
Materials Research Society Symposium Proceedings