Effects of annealing on donor and acceptor concentrations in Ga-doped ZnO thin films


Temperature-dependent Hall-effect measurements have been performed on three Ga- doped ZnO thin films of various thicknesses (65, 177, and 283 nm), grown by pulsed laser deposition at 400 °C and annealed at 400 °C for 10 min in Ar, N2, or forming-gas (5% H2 in Ar). The donor N D and acceptor NA concentrations as a function of sample thickness and annealing conditions are determined by a new formalism that involves only ionized-impurity and boundary scattering. Before annealing, the samples are highly compensated, with ND = (2.8 ± 0.3) × 1020 cm-3 and NA = (2.6 ± 0.2) × 1020 cm-3. After annealing in Ar the samples are less compensated, with ND = 3.7 ± 0.1 × 1020 cm-3 and NA = 2.0 ± 0.1 × 1020 cm-3 furthermore, these quantities are nearly independent of thickness. However, after annealing in N2 and forming-gas, N D and NA are thickness dependent, partly due to depth-dependent diffusion of N2 and H, respectively.


Physics, Astronomy, and Materials Science

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Conference Proceeding



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Materials Research Society Symposium Proceedings