Effect of substrate variation on electrical and magnetic properties of Mn doped ZnO dilute magnetic semiconductors

Abstract

In this paper, the effect of substrate on the domain structure growth and electrical and magnetic properties of highly c-axis oriented Mn-doped Zn 0.85Mn 0.15O (ZnMnO) thin films has been investigated. Thin films of ZnMnO dilute magnetic semiconductors (DMS) were grown on various substrates such as single crystal sapphire, single crystal silicon, and quartz using Pulsed Laser Deposition (PLD) technique. X-Ray Diffraction and Raman Spectroscopy show that the films are highly c-axis oriented with different induced strains. Electrical resistivity and Hall Effect data indicate that carrier concentration decreases and mobility increases for less strained films on silicon and quartz substrates compared to more strain film of ZnMnO on sapphire substrate.

Department(s)

Physics, Astronomy, and Materials Science
JVIC-CASE

Document Type

Conference Proceeding

DOI

https://doi.org/10.1557/PROC-0891-EE10-07

Publication Date

8-23-2006

Journal Title

Materials Research Society Symposium Proceedings

Link to Full Text

Share

COinS