Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation
Amorphous polyethersulfone (PES) films have been implanted with a variety of ions (He, B, C, N and As) at a bombarding energy of 50 keV in the dose range 1016-1017 ions/cm2. Surface resistance as a function of dose indicates a saturation effect with a significant difference between He and the other ions used. ESR line shapes in the He implanted samples changed from a mixed Gaussian/Lorentzian to a pure Lorentzian and narrowed with increasing dose. Temperature dependent resistivity indicates an electron hopping mechanism for conduction. Infrared results indicate cross-linking or self-cyclization occurred for all implanted ions with further destruction in the case of As. © 1991.
Physics, Astronomy, and Materials Science
Bridwell, Lynn B.; Giedd, Ryan E.; Yongqiang, Wang; Mohite, S. S.; Jahnke, Tamera; and Brown, I. M., "Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation" (1991). Articles by College of Natural and Applied Sciences Faculty. 2087.
Nuclear Inst. and Methods in Physics Research, B