Title
Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation
Abstract
Amorphous polyethersulfone (PES) films have been implanted with a variety of ions (He, B, C, N and As) at a bombarding energy of 50 keV in the dose range 1016-1017 ions/cm2. Surface resistance as a function of dose indicates a saturation effect with a significant difference between He and the other ions used. ESR line shapes in the He implanted samples changed from a mixed Gaussian/Lorentzian to a pure Lorentzian and narrowed with increasing dose. Temperature dependent resistivity indicates an electron hopping mechanism for conduction. Infrared results indicate cross-linking or self-cyclization occurred for all implanted ions with further destruction in the case of As. © 1991.
Department(s)
Physics, Astronomy, and Materials Science
Document Type
Article
DOI
https://doi.org/10.1016/0168-583X(91)95802-K
Publication Date
7-1-1991
Recommended Citation
Bridwell, Lynn B.; Giedd, Ryan E.; Yongqiang, Wang; Mohite, S. S.; Jahnke, Tamera; and Brown, I. M., "Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation" (1991). Articles by College of Natural and Applied Sciences Faculty. 2087.
https://bearworks.missouristate.edu/articles-cnas/2087
Journal Title
Nuclear Inst. and Methods in Physics Research, B