Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation

Abstract

Amorphous polyethersulfone (PES) films have been implanted with a variety of ions (He, B, C, N and As) at a bombarding energy of 50 keV in the dose range 1016-1017 ions/cm2. Surface resistance as a function of dose indicates a saturation effect with a significant difference between He and the other ions used. ESR line shapes in the He implanted samples changed from a mixed Gaussian/Lorentzian to a pure Lorentzian and narrowed with increasing dose. Temperature dependent resistivity indicates an electron hopping mechanism for conduction. Infrared results indicate cross-linking or self-cyclization occurred for all implanted ions with further destruction in the case of As. © 1991.

Department(s)

Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/0168-583X(91)95802-K

Publication Date

7-1-1991

Journal Title

Nuclear Inst. and Methods in Physics Research, B

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