Local structure surrounding implanted As+ ions in polysulfone films
Results from As K-edge XAFS studies on polysulfone films implanted with 50 KeV As+ in the dose range of 1015 to 1016 ions/cm2 indicate that As reacts chemically with O atoms to form As-(3)O based molecular structures having As-O bond lengths equal to 1.81±0.02 angstrom. In comparison to samples implanted in the dose range 1015 to 1016 ions/cm2, the molecular environment surrounding As in polysulfone implanted at 1017 ions/cm2 has additional structure beyond the nearest-neighbor O atoms.
Physics, Astronomy, and Materials Science
Mayanovic, R. A., Y. Feng, K. W. Groh, Y. Wang, R. E. Giedd, and M. G. Moss. "Local Structure Surrounding Implanted As+ Ions in Polysulfone Films." MRS Online Proceedings Library 321, no. 1 (1993): 113-116.
Materials Research Society Symposium Proceedings