Si K and Co L3 XANES study of thin-film CoSi2
X-ray absorption near edge structure (XANES) spectra of thin-film CoSi2 were measured at the Si K-and Co L3-edge. The Si K-edge spectrum for CoSi2 showed a dramatic reduction of intensity in the first broad feature accompanied by an increase in intensity of a peaked feature at higher energies when compared to the spectrum for crystalline Si. We attribute these two features to the Si 1s photoelectron excitations to a broad Si 3p nonbonding band and a relatively narrow band of hybridized Si p - Co 3d antibonding states, respectively. The Co L3-edge white line spectrum for CoSi2 reveals three distinct features which can be attributed to excitations to the unoccupied Co 3d nonbonding states and hybridized antibonding Co (3d, 4s) - Si p states.
Physics, Astronomy, and Materials Science
Pong, Way Faung; Chang, Y. K.; Mayanovic, Robert A.; Ho, G. H.; Lin, H. J.; Ko, S. H.; Tseng, P. K.; Chen, C. T.; Hiraya, A.; and Watanabe, Makoto, "Si K and Co L3 XANES study of thin-film CoSi2" (1996). Articles by College of Natural and Applied Sciences Faculty. 2128.
Journal of Electron Spectroscopy and Related Phenomena