Impact-collision ion-scattering spectrometry studies of the Si(111)-( 3 × 3)In surface
We have used the technique of impact-collision ion-scattering spectrometry to study the in-plane geometry of the Si(111)-( 3 × 3)In surface. The In adatoms are generally presumed to lie in a threefold-symmetric hollow position, i.e. the H3 site, of the Si(111) surface or in a threefold-symmetric position above a second-layer Si atom, i.e. the T4 site. Total-energy calculations favor the T4 site. Our ICISS polar-angle scans agree with the T4 structural simulations. Separations of the In and Si layers, and the In-Si bond length have also been determined from our experimental data.
Cornelison, D. M., C. S. Chang, and I. S. T. Tsong. "Impact-collision ion-scattering spectrometry studies of the Si (111)−(3× 3) In surface." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 45, no. 1-4 (1990): 394-397.
Nuclear Inst. and Methods in Physics Research, B