Analysis and control of interface reactions in microelectronic systems
Multilayer, multicomponent architectures are ubiquitous in microelectronic systems over size scales ranging from microns to nanometers. During device fabrication and use reactions at component interfaces often occur and lead to both beneficial and deleterious product phases. The analysis of the reactions is an essential component in developing strategies for reaction control. An effective approach for the analysis of interface reactions is presented based upon the interpretation of the interface microstructure evolution in terms of the operative multicomponent diffusion pathway where the influence of initially steep concentration gradients is included in the examination of reaction phase sequencing. From the established diffusion pathway a novel kinetic biasing approach can be devised as a robust means to engineer thermodynamic and mechanical compatibility including the development of an in-situ diffusion barrier. The degree of kinetic control can be augmented further by means of tailoring the diffusion pathways to establish the preferred interfacial reaction sequences. Furthermore, the extent of the interfacial control can be utilized to limit the formation of undesired interfacial reactions. The analysis and control concepts are illustrated with an example from high temperature SiC applications.
Diffusion pathway, Interface reactions, Kinetics, Nucleation
Perepezko, J. H., S. D. Imhoff, and R. Sakidja. "Analysis and Control of Interface Reactions in Microelectronic Systems." In International Symposium on Microelectronics, vol. 2011, no. 1, pp. 000264-000274. International Microelectronics Assembly and Packaging Society, 2011.
44th International Symposium on Microelectronics 2011, IMAPS 2011