The structure of the Si(100)-(4 × 3) In surface studied by STM and ICISS
When indium is deposited onto the Si(100)-(2 × 1) surface and annealed at temperatures between 200 and 500°C, scanning tunneling microscopy (STM) images show (4 × 3) reconstruction for coverages from 0.5 to 25 monolayers (ML). Although the STM images of the (4 × 3) geometry are not atom-resolved, an arrangement of atoms with a bow-tie like structure can be postulated. We use impact-collision ion-scattering spectrometry (ICISS) to carry out polar angle scans on the Si(100)-(4 × 3)In surface and perform computer-simulated fits using different atomic models of the bow-tie structure. A best fit to the experimental ICISS polar angle scans is obtained for one of the models tested.
Steele, B. E., D. M. Cornelison, Li Lian, and I. S. T. Tsong. "The structure of the Si (100)-(4× 3) In surface studied by STM and ICISS." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 85, no. 1-4 (1994): 414-419.
Nuclear Inst. and Methods in Physics Research, B