Current-voltage characteristics of p-Si/carbon junctions fabricated by pulsed laser deposition
Amorphous carbon/p-Si junctions were fabricated at different temperatures using KrF excimer laser (λ = 248 nm, pulsed duration 20 ns). The current-voltage measurements of the devices showed diode characteristics. The value of various junction parameters such as ideality factor, barrier height, and series resistance were determined from forward bias I-V characteristics, Cheung method, and Norde's function. There was a good agreement between the diodes parameters obtained from these methods. The ideality factor of ∼1.12 and barrier height of ∼0.37 eV were estimated using current-voltage characteristics for films grown at room temperature. © 2009 Elsevier B.V. All rights reserved.
Physics, Astronomy, and Materials Science
Carbon, Junction parameters, Pulsed laser, Thin films
Gupta, R. K., K. Ghosh, and P. K. Kahol. "Current–voltage characteristics of p-Si/carbon junctions fabricated by pulsed laser deposition." Microelectronic engineering 87, no. 2 (2010): 221-224.