Current-voltage characteristics of p-Si/carbon junctions fabricated by pulsed laser deposition

Abstract

Amorphous carbon/p-Si junctions were fabricated at different temperatures using KrF excimer laser (λ = 248 nm, pulsed duration 20 ns). The current-voltage measurements of the devices showed diode characteristics. The value of various junction parameters such as ideality factor, barrier height, and series resistance were determined from forward bias I-V characteristics, Cheung method, and Norde's function. There was a good agreement between the diodes parameters obtained from these methods. The ideality factor of ∼1.12 and barrier height of ∼0.37 eV were estimated using current-voltage characteristics for films grown at room temperature. © 2009 Elsevier B.V. All rights reserved.

Department(s)

Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/j.mee.2009.07.025

Keywords

Carbon, Junction parameters, Pulsed laser, Thin films

Publication Date

2-1-2010

Journal Title

Microelectronic Engineering

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