Abstract
In this study, we describe an experimental approach based on constant-current scanning tunneling spectroscopy to controllably and reversibly pull freestanding graphene membranes up to 35 nm from their equilibrium height. In addition, we present scanning tunneling microscopy (STM) images of freestanding graphene membranes with atomic resolution. Atomic-scale corrugation amplitudes 20 times larger than the STM electronic corrugation for graphene on a substrate were observed. The freestanding graphene membrane responds to a local attractive force created at the STM tip as a highly conductive yet flexible grounding plane with an elastic restoring force. We indicate possible applications of our method in the controlled creation of pseudomagnetic fields by strain on single-layer graphene.
Department(s)
Physics, Astronomy, and Materials Science
Document Type
Article
DOI
https://doi.org/10.1103/PhysRevB.85.121406
Rights Information
© 2012 American Physical Society
Publication Date
3-19-2012
Recommended Citation
Xu, P., Yurong Yang, S. D. Barber, M. L. Ackerman, J. K. Schoelz, D. Qi, Igor A. Kornev et al. "Atomic control of strain in freestanding graphene." Physical Review B 85, no. 12 (2012): 121406.
Journal Title
Physical Review B - Condensed Matter and Materials Physics
