Molecular beam epitaxy growth of GaN on C-terminated 6H-SiC (0001) surface
We report the results of successful growth of GaN on the C-terminated surface of SiC. A combination of direct heating and hydrogen plasma treatment was employed for surface preparation. High-quality epitaxy was achieved in epilayers as thin as 2000 Å, as evidenced by the x-ray diffraction full width at half maximum of 90 arc sec and 4.2 K donor-bound exciton peak width of 1.4 meV. The epilayers exhibit clear signatures of compressive strain, suggesting a more favorable growth mode than can be achieved on the Si-terminated surface.
Physics, Astronomy, and Materials Science
Guan, Z. P., A. L. Cai, J. S. Cabalu, H. L. Porter, and S. Huang. "Molecular beam epitaxy growth of GaN on C-terminated 6H–SiC (000 1¯) surface." Applied physics letters 77, no. 16 (2000): 2491-2493.
Applied Physics Letters