P-Si/DNA photoconductive diode for optical sensor applications
The junction parameters of Al/p-Si/Ag and Al/p-Si/DNA/Ag diodes were studied using current-voltage (I-V), capacitance-voltage (C-V), and capacitance-frequency (C-f) measurements. The photoresponse properties of the diodes were analyzed using transient photocurrent measurements. The photoresponse of the Al/p-Si/DNA/Ag diode is better than that of Al/p-Si/Ag diode. The ideality factor and barrier height values of the Al/p-Si/DNA/Ag diode were obtained to be 1.2 ± 0.1 and 0.56 ± 0.02 eV, respectively. The capacitance of the diodes increases with decreasing frequency which is explained by the change in the interface states. These results indicate that the p-Si/DNA junction could be used as an optical sensor.
Physics, Astronomy, and Materials Science
DNA, Ideality factor, Organic material, Photoresponse, Schottky diode
Gupta, R. K., F. Yakuphanoglu, H. Hasar, and Abdulaziz A. Al-Khedhairy. "p-Si/DNA photoconductive diode for optical sensor applications." Synthetic metals 161, no. 17-18 (2011).