Fabrication and electrical characterization of Schottky diode based on 2-amino-4, 5-imidazoledicarbonitrile (AIDCN)
The junction characteristics of the organic compound 2-amino-4, 5-imidazoledicarbonitrile (AIDCN) on p-type silicon substrate are studied in detail. AIDCN is deposited on silicon substrate using thermal evaporator. Current–voltage (I–V) characteristic of the device is measured at room temperature. The Au/AIDCN/p-Si device shows non-linear I–V characteristic with rectification ratio of 7.2×103 at 5 V. The electronic device parameters such as barrier height, ideality factor, and series resistance are calculated using I–V data and observed to be 0.74 eV, 3.00, and 3.73×104 Ω respectively.
Physics, Astronomy, and Materials Science
amorphous films, rganics, semiconductors, transport properties
Gupta, R. K., K. Ghosh, and P. K. Kahol. "Fabrication and electrical characterization of Schottky diode based on 2-amino-4, 5-imidazoledicarbonitrile (AIDCN)." Physica E: Low-dimensional Systems and Nanostructures 41, no. 10 (2009): 1832-1834.
Physica E: Low-dimensional Systems and Nanostructures