Thickness dependence of optoelectrical properties of tungsten-doped indium oxide films
Pulsed laser deposition technique is used for deposition of tungsten-doped indium oxide films. The effect of film thickness on structural, optical and electrical properties was studied using X-ray diffraction (XRD), atomic force microscopy, UV–visible spectroscopy, and electrical measurements. X-ray diffraction study reveals that all the films are highly crystalline and oriented along (2 2 2) direction and the film crystallinity increases with increase in film thickness. Atomic force microscopy analysis shows that these films are very smooth with root mean square surface roughness of ∼1.0 nm. Bandgap energy of the films depends on thickness and varies from 3.71 eV to 3.94 eV. It is observed that resistivity of the films decreases with thickness, while mobility increases.
Physics, Astronomy, and Materials Science
semiconductor, electrical properties, thin films, indium oxide, optical materials and properties
Gupta, R. K., K. Ghosh, and P. K. Kahol. "Thickness dependence of optoelectrical properties of tungsten-doped indium oxide films." Applied surface science 255, no. 21 (2009): 8926-8930.
Applied surface science