Junction characteristics of pulsed laser deposition grown Gd2O3 on p-silicon

Abstract

Thin film of gadolinium oxide (Gd2O3) is grown on p-silicon using pulsed laser deposition technique. The current–voltage characteristics of the device show non-linear behavior. The values of various junction parameters such as ideality factor, barrier height and series resistance are determined using different techniques. There is a good agreement between the junction parameters obtained from these methods. The ideality factor and barrier height is estimated to be 2.26 and 0.33 eV, respectively.

Department(s)

Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/j.physe.2009.01.020

Keywords

gadolinium oxide, pulsed laser, films, junction parameters, barrier height, ideality factor

Publication Date

2009

Journal Title

Physica E: Low-dimensional Systems and Nanostructures

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