Junction characteristics of pulsed laser deposition grown Gd2O3 on p-silicon
Thin film of gadolinium oxide (Gd2O3) is grown on p-silicon using pulsed laser deposition technique. The current–voltage characteristics of the device show non-linear behavior. The values of various junction parameters such as ideality factor, barrier height and series resistance are determined using different techniques. There is a good agreement between the junction parameters obtained from these methods. The ideality factor and barrier height is estimated to be 2.26 and 0.33 eV, respectively.
Physics, Astronomy, and Materials Science
gadolinium oxide, pulsed laser, films, junction parameters, barrier height, ideality factor
Gupta, R. K., K. Ghosh, and P. K. Kahol. "Junction characteristics of pulsed laser deposition grown Gd2O3 on p-silicon." Physica E: Low-dimensional Systems and Nanostructures 41, no. 7 (2009): 1201-1203.
Physica E: Low-dimensional Systems and Nanostructures