Fabrication and electrical characterization of Au/p-Si/STO/Au contact
Au/STO/p-Si/Au structure is fabricated using pulsed laser deposition technique at room temperature. The current–voltage (I–V) characteristics of the device show rectification behavior. Various junction parameters such as ideality factor, barrier height and series resistance is determined using conventional forward bias I–V characteristics, Cheung method and Norde’s function. Au/STO/p-Si/Au structure shows non-ideal diode characteristics with the value of ideality factor of ∼5.1 and barrier height of ∼0.40 eV.
Physics, Astronomy, and Materials Science
strontium titanate, pulsed laser, thin films, barrier height, ideality factor
Gupta, R. K., K. Ghosh, and P. K. Kahol. "Fabrication and electrical characterization of Au/p-Si/STO/Au contact." Current Applied Physics 9, no. 5 (2009): 933-936.
Current Applied Physics