Band gap engineering of ZnO thin films by In2O3 incorporation
Highly transparent and conducting thin films of ZnO–In2O3 were deposited using pulsed laser deposition (PLD) technique. The effect of composition and growth temperature on structural, electrical, and optical properties was studied. The lowest resistivity of 2.11×10−4 Ω cm and high transparency (∼80%) was obtained for the film having 5% In2O3 in ZnO. The band gap of the films depends on doping level and varies from 3.37 to 3.95 eV.
Physics, Astronomy, and Materials Science
A1. hall effect, A1. mobility, B1. zinc oxide, B1. indium oxide, A3. pulsed laser deposition, B3. transparent electrode
Gupta, R. K., K. Ghosh, R. Patel, S. R. Mishra, and P. K. Kahol. "Band gap engineering of ZnO thin films by In2O3 incorporation." Journal of crystal growth 310, no. 12 (2008): 3019-3023.
Journal of crystal growth