Title

Band gap engineering of ZnO thin films by In2O3 incorporation

Document Type

Article

Publication Date

2008

Keywords

A1. hall effect, A1. mobility, B1. zinc oxide, B1. indium oxide, A3. pulsed laser deposition, B3. transparent electrode

Abstract

Highly transparent and conducting thin films of ZnO–In2O3 were deposited using pulsed laser deposition (PLD) technique. The effect of composition and growth temperature on structural, electrical, and optical properties was studied. The lowest resistivity of 2.11×10−4 Ω cm and high transparency (∼80%) was obtained for the film having 5% In2O3 in ZnO. The band gap of the films depends on doping level and varies from 3.37 to 3.95 eV.

Recommended Citation

Gupta, R. K., K. Ghosh, R. Patel, S. R. Mishra, and P. K. Kahol. "Band gap engineering of ZnO thin films by In2O3 incorporation." Journal of crystal growth 310, no. 12 (2008): 3019-3023.

DOI for the article

10.1016/j.jcrysgro.2008.03.004

Department

Physics, Astronomy, and Materials Science

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