Title

Properties of ZnO/W-doped In2O3/ZnO multilayer thin films deposited at different growth temperatures

Document Type

Article

Publication Date

2008

Abstract

Multilayer thin films of zinc oxide and tungsten-doped indium oxide are deposited by the pulsed laser deposition technique using a KrF excimer laser. The effect of growth temperature on the properties of multilayer films is studied. It is observed that these films are highly transparent and the transparency of the films increases with growth temperature. X-ray diffraction study reveals that films grown at high growth temperature are crystalline, while films grown at low growth temperature are amorphous in nature. The electrical properties such as conductivity and electron mobility of the multilayer films increase with growth temperature.

Recommended Citation

Gupta, R. K., K. Ghosh, R. Patel, and P. K. Kahol. "Properties of ZnO/W-doped In2O3/ZnO multilayer thin films deposited at different growth temperatures." Journal of Physics D: Applied Physics 41, no. 21 (2008): 215309.

DOI for the article

10.1088/0022-3727/41/21/215309

Department

Physics, Astronomy, and Materials Science

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