Fabrication and characterization of p-n junctions based on ZnO and CuPc
p-n Junctions based on zinc oxide (ZnO) and copper-phthalocyanine (CuPc) were fabricated using pulsed laser deposition and thermal evaporator techniques, respectively. Current-voltage (I-V) characteristics of the ZnO-CuPc junction showed rectifying behavior. Various junction parameters such as barrier height and ideality factor were calculated using I-V data and observed to be 0.63 ± 0.02 eV and 4.0 ± 0.3, respectively. Cheung and Norde's method were used to compare the junction parameters obtained by I-V characteristics.
Physics, Astronomy, and Materials Science
p–n Junction, ZnO, CuPc, pulsed laser, thermal evaporator, thin films, semiconductor
Gupta, R. K., F. Yakuphanoglu, K. Ghosh, and P. K. Kahol. "Fabrication and characterization of p–n junctions based on ZnO and CuPc." Microelectronic engineering 88, no. 10 (2011): 3067-3069.