Title

Fabrication and characterization of p-n junctions based on ZnO and CuPc

Abstract

p-n Junctions based on zinc oxide (ZnO) and copper-phthalocyanine (CuPc) were fabricated using pulsed laser deposition and thermal evaporator techniques, respectively. Current-voltage (I-V) characteristics of the ZnO-CuPc junction showed rectifying behavior. Various junction parameters such as barrier height and ideality factor were calculated using I-V data and observed to be 0.63 ± 0.02 eV and 4.0 ± 0.3, respectively. Cheung and Norde's method were used to compare the junction parameters obtained by I-V characteristics.

Department(s)

Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/j.mee.2011.05.023

Keywords

p–n Junction, ZnO, CuPc, pulsed laser, thermal evaporator, thin films, semiconductor

Publication Date

2011

Recommended Citation

Gupta, R. K., F. Yakuphanoglu, K. Ghosh, and P. K. Kahol. "Fabrication and characterization of p–n junctions based on ZnO and CuPc." Microelectronic engineering 88, no. 10 (2011): 3067-3069.

Journal Title

Microelectronic engineering

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