Effect of thickness on optoelectrical properties of Mo-doped indium oxide films
Molybdenum-doped indium oxide films of various thicknesses were deposited on quartz substrate by pulsed laser deposition technique. The effect of thickness on structural, optical, and electrical properties was studied. X-ray diffraction studied revealed that all the films are highly oriented along (2 2 2) direction. It is observed that film crystallinity increases with thickness. These films are highly transparent (82-96%) in visible region. Atomic force microscopy analysis shows that the films are very smooth with root mean square surface roughness of 0.95 nm for 10 nm thick film. It is observed that resistivity of the films decreases from 1.05 × 10-4 Ω cm to 6.06 × 10-5 Ω cm, while mobility increases from 172 cm2/Vs to 263 cm2/Vs with increases in film thickness from 10 nm to 125 nm, respectively.
Physics, Astronomy, and Materials Science
semiconductor, electrical properties, thin filmsIndium oxide, optical materials and properties
Gupta, R. K., K. Ghosh, R. Patel, and P. K. Kahol. "Effect of thickness on optoelectrical properties of Mo-doped indium oxide films." Applied Surface Science 255, no. 5 (2008): 3046-3048.
Applied surface science