Thesis Title

A Novel Method For Fabrication of Carbon-Based Semiconductors

Date of Graduation

Spring 2007


Master of Natural and Applied Science in Physics


Physics, Astronomy, and Materials Science

Committee Chair

Kandiah Manivannan


Carbon based semiconductors are more desirable than silicon semiconductors for device applications due to their superior mechanical strength, thermal conductivity, and biocompatibility. However, it is challenging to fabricate both p-type and n-type carbon-based semiconductors. An inexpensive, quick method to grow high quality semiconducting carbon films has been developed. Using this method, intrinsic and extrinsic semiconducting films have been grown from a solution of metal-organic compounds. The solution is frozen with liquid N₂ at -200°C. A pulsed laser is used to ablate the target and deposit the film on a substrate. Transmission electron microscopy has been used to verify the microstructure of these films. Raman spectroscopy data shows a carbon characteristic peak at wavenumber 1600cm⁻¹. Electrical parameters such as carrier concentration and Hall mobility have been calculated from detailed magneto-transport characterization. Most iron doped films show p-type semiconducting behavior, although n-type behavior has been observed. Carrier concentration generally increases with increasing iron concentration level. We have also demonstrated that encapsulated iron nanoparticles in carbon matrices can be fabricated when the doping level is increased to a very high level. (Project partially funded by Missouri State University Graduate College.)


carbon, iron, semiconductor, pulsed laser deposition, nanoparticle

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