Thesis Title

Growth and Characterization of Manganese Doped Galium Arsenide Thin Films

Date of Graduation

Summer 2002


Master of Science in Materials Science


Physics, Astronomy, and Materials Science

Committee Chair

James Broerman


Devices which rely on spin for performing their functions form the foundation of a new field of electronics called spintronics. In the present work growth and characterization of manganese doped gallium arsenide thin films is discussed. An MBE system, subsequently a Hall Effect characterization system including an electromagnet was set up. GaAs films with various Ga to As ratios were grown at low temperature and high As ratios were used as the basis of growth for Mn doped GaAs thin films. Van der Pauw Hall Effect and resistivity measurements of these films were done for determining the electrical properties. These results demonstrate the expected behaviour of Mn in GaAs, and serve as an indication for future research directions.

Subject Categories

Materials Science and Engineering


© Pavan Reddy K. Aella