Growth and Characterization of Manganese Doped Galium Arsenide Thin Films
Date of Graduation
Summer 2002
Degree
Master of Science in Materials Science
Department
Physics, Astronomy, and Materials Science
Committee Chair
James Broerman
Abstract
Devices which rely on spin for performing their functions form the foundation of a new field of electronics called spintronics. In the present work growth and characterization of manganese doped gallium arsenide thin films is discussed. An MBE system, subsequently a Hall Effect characterization system including an electromagnet was set up. GaAs films with various Ga to As ratios were grown at low temperature and high As ratios were used as the basis of growth for Mn doped GaAs thin films. Van der Pauw Hall Effect and resistivity measurements of these films were done for determining the electrical properties. These results demonstrate the expected behaviour of Mn in GaAs, and serve as an indication for future research directions.
Subject Categories
Materials Science and Engineering
Copyright
© Pavan Reddy K. Aella
Recommended Citation
Aella, Pavan Reddy K., "Growth and Characterization of Manganese Doped Galium Arsenide Thin Films" (2002). MSU Graduate Theses/Dissertations. 841.
https://bearworks.missouristate.edu/theses/841
Dissertation/Thesis
