Temperature Dependent Electrical Transport Properties of High Carrier Mobility Reduced Graphene Oxide Thin Film Devices


We report temperature dependent electrical transport properties of high mobility reduced graphene oxide (RGO) thin films fabricated by pulse laser deposition. The temperature dependent (5K-350K) four terminal electrical transport property measurements confirm variable range hopping and thermally activated transport mechanism of the charge carriers at low (5K-210K) and high temperature (210K-350K) regions, respectively. The calculated localization length, the density of states near the Fermi level (EF), hopping energy, and Arrhenius energy gap provide useful information to explain the excellent electrical properties of the RGO films. Hall mobility measurement confirms p-type characteristics of the thin films. The charge carrier Hall mobility can be engineered by tuning the growth parameters, and the measured maximum mobility was 1596 cm2v-1s-1. The optimization of the improved electrical property is well supported by structural properties such as the defect density, average size of sp2 clusters and degree of reduction, which were investigated by Raman spectroscopy and X-ray diffraction analysis.


Physics, Astronomy, and Materials Science

Document Type





hall mobility, localization length, PLD, Raman spectroscopy, Reduced graphene oxide, variable range hopping

Publication Date


Journal Title

IEEE Transactions on Semiconductor Manufacturing