Abstract

The phenomenon of resistive switching (RS) has been demonstrated in several non-magnetic and some magnetic oxide systems, however the "œmagnetic" aspect of magnetic oxides has not been emphasized especially in terms of low field tunability. In our work, we examined the CoFe2O4/La0.66Sr0.34MnO3 all-magnetic oxide interface system for RS and discovered a very sharp (bipolar) transition at room temperature that can be gated with high sensitivity by low magnetic fields (~0"“100"‰mT). By using a number of characterizations, we show that this is an interface effect, which may open up interesting directions for manipulation of the RS phenomenon.

Department(s)

Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1063/1.4707373

Rights Information

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in AIP Advances and may be found at https://doi.org/10.1063/1.4707373

Publication Date

2012

Recommended Citation

Thakare, Vishal, Guozhong Xing, Haiyang Peng, Abhimanyu Rana, Onkar Game, P. Anil Kumar, Arun Banpurkar et al. "High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0. 66Sr0. 34MnO3 heterostructure." Applied Physics Letters 100, no. 17 (2012): 172412.

Journal Title

Applied Physics Letters

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