Minority electron mobility in a p-n GaN photodetector
Abstract
Photoconductive transients and responsivity in a GaN p-n UV photodetector under different applied voltages are investigated at room temperature. The electron mobility of minority carriers in the p-GaN epilayer has been measured by a diffusion time-of-flight technique, and was found to be about 0.12 cm2 V-1 s-1 with the bias between 1 V and 12 V. The difference of the electron mobilities between the minority carriers in p-GaN and the majority carriers in n-GaN is explained by different scattering mechanisms. The neutral impurity and phonon scattering mechanisms dominate the minority electron mobility in p-GaN. The photoconductive responsivity increases nearly linearly at low voltage and saturates at about 10 V, corresponding to a saturation field of approximately 3.7×104 V cm-1. The implication of these results for applications of GaN UV detectors is also discussed.
Department(s)
Physics, Astronomy, and Materials Science
Document Type
Article
DOI
https://doi.org/10.1088/0268-1242/15/1/309
Publication Date
1-1-2000
Recommended Citation
Guan, Z. P., J. Z. Li, G. Y. Zhang, S. X. Jin, and X. M. Ding. "Minority electron mobility in a pn GaN photodetector." Semiconductor science and technology 15, no. 1 (2000): 51.
Journal Title
Semiconductor Science and Technology
