Hot-wire growth of multi-phase carbon nitride films


This paper describes the growth of multi-phase carbon nitride films using hot-wire chemical vapor deposition (HWCVD) on (100)-oriented crystalline Si substrates. A mixture of either CH4/NH3 or CH4/N2 was activated over a hot tungsten filament under varying deposition conditions. The samples were characterized by atomic force microscopy (AFM) and X-ray diffraction (XRD). AFM micrographs show the presence of facetted crystallites. The XRD peaks observed were compared with theoretical predictions for α-C3N4 and β-C3N4—the two ultra-hard phases of carbon nitride. The results suggest the presence of α-C3N4 and β-C3N4, as well as other unidentified phases in our films. We also calculated the equilibrium concentration of the various gas species as a function of temperature and pressure. Our results indicate that CN and C2N2 radicals are possible precursors to carbon nitride growth.


Physics, Astronomy, and Materials Science

Document Type




hot-wire deposition, ultra-hard materials, carbon nitride

Publication Date


Journal Title

Thin Solid Films