Reduced Graphene Oxide Thin Films with Very Large Charge Carrier Mobility Using Pulsed Laser Deposition


Large area reduced graphene oxide (RGO) thin films have been grown using pulsed laser deposition (PLD) technique. A very large carrier mobility of 372 cm2 V-1s-1 has been observed in a PLD grown RGO thin film with a large sp2 carbon fraction of 87% along with narrow Raman 2D peak profile. The fraction of sp2 carbon and carbon/oxygen ratios are tuned through PLD growth parameters, and these are estimated from X-ray photoelectron spectroscopy (XPS) data. The electrical properties of the RGO thin films are comprehended by the intensity ratios between different optical phonon vibrational modes of Raman Spectra. The photoluminescence spectra also indicate a less intense and broader blue fluorescence spectrum detecting the presence of miniature sized sp2 domains in the near vicinity of π* electronic states which favor the variable range hopping transport phenomena. This study on large area RGO thin films with very large carrier mobility fabricated by PLD process will be very useful for high mobility electronic device applications and could open a roadmap for further extensive research in functionalized 2D materials.


Physics, Astronomy, and Materials Science

Document Type




reduced graphene oxide, raman spectroscopy, variable range hoppin, 2D-materials, pulsed laser deposition

Publication Date


Journal Title

Journal of Material Sciences & Engineering