Molecular Beam Epitaxy-Installation, Vacuum Generation and Growth
Date of Graduation
Master of Science in Materials Science
Physics, Astronomy and Materials Science
MBE, thin films, UHV, installation, growth of GaAs
Materials Science and Engineering
Molecular Beam Epitaxy (MBE) is a deposition technique for the growth of high quality epitaxial thin films with precise carrier concentration. Ultra high vacuum (UHV) is an important criterion for thin film growth by this technique. UHV provides a unique environment in which these films can be grown, modified and characterized. To achieve UHV proper clean room principles and component installation procedures were followed. Extorr Residal gas Analyzer (RGA) was used for leak detection. A leak free MBE was constructed and UHV was successfully achieved. Finally GaAs thin films were grown by the BME technique.
© Hemanth Kumar Parsa
Parsa, Hemanth Kumar, "Molecular Beam Epitaxy-Installation, Vacuum Generation and Growth" (2005). MSU Graduate Theses. 1573.