Molecular Beam Epitaxy-Installation, Vacuum Generation and Growth

Author

Hemanth Kumar Parsa

Date of Graduation

Fall 2005

Degree

Master of Science in Materials Science

Department

Physics, Astronomy, and Materials Science

Committee Chair

Shyang Hwang

Abstract

Molecular Beam Epitaxy (MBE) is a deposition technique for the growth of high quality epitaxial thin films with precise carrier concentration. Ultra high vacuum (UHV) is an important criterion for thin film growth by this technique. UHV provides a unique environment in which these films can be grown, modified and characterized. To achieve UHV proper clean room principles and component installation procedures were followed. Extorr Residal gas Analyzer (RGA) was used for leak detection. A leak free MBE was constructed and UHV was successfully achieved. Finally GaAs thin films were grown by the BME technique.

Keywords

MBE, thin films, UHV, installation, growth of GaAs

Subject Categories

Materials Science and Engineering

Copyright

© Hemanth Kumar Parsa

Recommended Citation

Parsa, Hemanth Kumar, "Molecular Beam Epitaxy-Installation, Vacuum Generation and Growth" (2005). MSU Graduate Theses/Dissertations. 1573.
https://bearworks.missouristate.edu/theses/1573