Interfacial Effects of UV-Ozone Treated Sol-Gel Processable ZnO for Hybrid Photodetectors and Thin Film Transistors

Abstract

Hybrid organic-inorganic semiconducting interfaces have attracted attention in photodiodes and field-effect transistors (FETs) due to the realization of intrinsic p-n junctions and their mechanical flexibility. With the difficulty of developing high-mobility n-type organic semiconductors due to the necessity of low LUMO levels and ambient environment stability, solution processable inorganic materials are an excellent alternative. ZnO is an intrinsic n-type semiconductor which is non-toxic and sol-gel processable, creating avenues for film patterning and fully solution processed devices. We report the improvement of electron mobilities in ZnO FETs through simple UV-Ozone processing which reduces lattice defects within the film and at the SiO2/ZnO interface. Treated ZnO films yield electron mobilities close to 10-2 cm2/Vs and on/off current ratios of 104 while non-treated films have mobilities on the order of 10-5 cm2/Vs and an order of magnitude lower on/off current ratios. Treated films also yield improved photoresponsivity and detectivity in hybrid ZnO-organic photodetectors.

Department(s)

Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1557/adv.2019.298

Keywords

devices, II-VI, interface, organic, sol-gel

Publication Date

1-1-2019

Journal Title

MRS Advances

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