Preparation and characterization of highly conducting and transparent Al doped CdO thin films by pulsed laser deposition

Abstract

Highly conducting and transparent aluminum doped CdO thin films were deposited using pulsed laser deposition technique. The effect of growth temperature on structural, electrical, and optical properties was studied. It is observed that the film orientation changes from preferred (1 1 1) plane to (2 0 0) plane with increase in growth temperature. The electrical resistivity of the films was found to increase with increase in growth temperature. The low resistivity of 4.3 × 10-5 Ω cm and high transparency (∼85%) was obtained for the film grown at 150 °C. The band gap of the films varies from 2.74 eV to 2.84 eV.

Department(s)

Physics, Astronomy, and Materials Science
JVIC

Document Type

Article

DOI

https://doi.org/10.1016/j.cap.2008.06.004

Keywords

Aluminum oxide, Cadmium oxide, Hall effect, Mobility, Pulsed laser deposition, Transparent electrode

Publication Date

5-1-2009

Journal Title

Current Applied Physics

Link to Full Text

Share

COinS