High mobility Ti-doped In2O3 transparent conductive thin films
Abstract
Highly conducting and transparent titanium (Ti)-doped indium oxide (In2O3) films were deposited on sapphire substrate by ablating the sintered In2O3 target containing 1-10 wt.% TiO2 with a KrF excimer laser (λ = 248 nm and pulsed duration of 20 ns). The effect of growth temperature from room temperature to 600 °C and oxygen pressure (1.0 × 10- 4-2.5 × 10- 7 bar) has been studied by analyzing structural, optical, and electrical properties of these films. The conductivity, carrier concentration and mobility of the films grown at 600 °C are 10,858 S cm- 1, 4.3 × 1020 cm- 3 and 159 cm2 V- 1 s- 1 respectively. This is the highest mobility ever obtained in doped In2O3 films.
Department(s)
JVIC-Center for Biomedical and Life Sciences
Physics, Astronomy, and Materials Science
Document Type
Article
DOI
https://doi.org/10.1016/j.matlet.2007.07.052
Keywords
Electrical properties, Indium oxide, Optical materials and properties, Semiconductor, Thin films, Titanium
Publication Date
3-15-2008
Recommended Citation
Gupta, R. K., K. Ghosh, S. R. Mishra, and P. K. Kahol. "High mobility Ti-doped In2O3 transparent conductive thin films." Materials Letters 62, no. 6-7 (2008): 1033-1035.
Journal Title
Materials Letters
