Opto-electrical properties of Ti-doped In 2 O 3 thin films grown by pulsed laser deposition

Abstract

By ablating titanium containing In 2 O 3 target with a KrF excimer laser, highly conducting and transparent films on quartz were obtained to investigate the effects of growth temperature and oxygen pressure on the structural, optical and electrical properties of these films. We find that the transparency of the films depends more on the growth temperature and less on the oxygen pressure. Electrical properties, however, are found to be sensitive to both the growth temperature and oxygen pressure. We report in this paper that a growth temperature of 500 °C and an oxygen pressure of 7.5 × 10 -7 bar lead to titanium-doped indium oxide films which have high mobility (up to 199 cm 2 V -1 s -1 ), low resistivity (9.8 × 10 -5 Ω cm), and relatively high transmittance (∼88%).

Department(s)

JVIC-Center for Biomedical and Life Sciences
Physics, Astronomy, and Materials Science

Document Type

Article

DOI

https://doi.org/10.1016/j.apsusc.2007.06.004

Keywords

Electrical properties, Indium oxide, Optical materials and properties, Semiconductor, Thin films, Titanium

Publication Date

10-15-2007

Journal Title

Applied Surface Science

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