Room temperature ferromagnetic multilayer thin film based on indium oxide and iron oxide for transparent spintronic applications
Abstract
Pulsed laser deposition technique is used for fabrication of multilayer thin film of indium oxide (In2O3) and iron oxide (Fe 3O4). X-ray diffraction study shows that In 2O3 film is highly oriented along (222) direction. The optical band gap of the multilayer is observed to be 3.65 eV. The film shows n-type behavior with resistivity, carrier concentration, and mobility of 5.59 × 10-4 Ω.cm, 2.33 × 1020 cm-3, and 48 cm 2v-1 s-1 respectively. Magnetic measurement shows that the film is ferromagnetic at room temperature. Hysteresis measurements at 5 K after field cooling show a shift and broadening of the hysteresis loop, which is due to exchange bias coupling.
Department(s)
JVIC-Center for Biomedical and Life Sciences
Physics, Astronomy, and Materials Science
Document Type
Article
DOI
https://doi.org/10.1016/j.matlet.2010.06.026
Keywords
Exchange bias, Ferromagnetic, Indium oxide, Iron oxide, Multilayer
Publication Date
9-30-2010
Recommended Citation
Gupta, R. K., K. Ghosh, and P. K. Kahol. "Room temperature ferromagnetic multilayer thin film based on indium oxide and iron oxide for transparent spintronic applications." Materials Letters 64, no. 18 (2010): 2022-2024.
Journal Title
Materials Letters