Raman scattering from organic light emitting diodes

Authors

S. Guha
Mohammad Arif
J. G. Keeth, MSU JVIC-CASE
Ted W. Kehl, Missouri State University
Kartik C. Ghosh, Missouri State UniversityFollow
Ryan E. Giedd, Missouri State UniversityFollow

Abstract

We present Raman studies from working organic light emitting diodes (OLEDs) fabricated from a single layer of para-hexaphenyl (PHP). The OLEDs were fabricated on patterned ITO substrates with Al cathode. The Raman intensity ratio, I 1280/I 1220, increases with current injection. This is interpreted in terms of a conformational change where the phenyl rings become more aromatic (benzenoid) upon charge injection. Further, capacitance vs. voltage measurements indicate the presence of interface states.

Department(s)

JVIC-Center for Biomedical and Life Sciences
Physics, Astronomy, and Materials Science

Document Type

Conference Proceeding

DOI

https://doi.org/10.1063/1.1994486

Publication Date

6-30-2005

Recommended Citation

Guha, S., M. Arif, J. G. Keeth, T. W. Kehl, K. Ghosh, and R. E. Giedd. "Raman Scattering from Organic Light Emitting Diodes." In AIP Conference Proceedings, vol. 772, no. 1, pp. 1079-1080. American Institute of Physics, 2005.

Journal Title

AIP Conference Proceedings