Interface-controlled pulsed-laser deposited polymer films in organic devices
Abstract
Matrix assisted pulsed laser evaporation (MAPLE) allows homogeneous film coverage of organic materials for layer-by-layer growth providing a tighter control of the polymer-dielectric interface in field-effect transistors (FETs) and metal-insulator-semiconductor (MIS) diodes. Electrical characteristics of FETs and MIS diodes using MAPLE and spin-coated grown fluorene copolymer films are compared. Current-voltage characteristics of MAPLE grown FETs without any surface modification show a better performance compared to the spin-coated FETs. Capacitance-voltage and conductance-voltage investigations of the MIS structures show that loss as well as accumulation capacitance and time constant dispersions are less in the MAPLE grown film compared to the spin-coated film.
Department(s)
Physics, Astronomy, and Materials Science
Document Type
Article
DOI
https://doi.org/10.1016/j.synthmet.2010.09.034
Keywords
Field-effect transistor, Metal-insulator-semiconductor, Polyfluorene, Pulsed laser evaporation
Publication Date
12-1-2010
Recommended Citation
Adil, D., N. B. Ukah, R. K. Gupta, K. Ghosh, and S. Guha. "Interface-controlled pulsed-laser deposited polymer films in organic devices." Synthetic metals 160, no. 23-24 (2010): 2501-2504.
Journal Title
Synthetic Metals