Synthesis of polycrystalline silicon thin films with 'icosahedral' symmetry by ceramics hot wire chemical vapor deposition
Abstract
We report on synthesis and materials physics of polycrystalline silicon thin films deposited on glass with rarely observed 'five-fold' symmetry or 'icosahedral' symmetry. We invented these 'novel form' of polycrystalline silicon thin films by ceramics hot wire chemical vapor deposition (hot-wire CVD). A new physical effect in hot-wire CVD technology has been proposed that controls the nucleation and growth of silicon thin films on glass substrate.
Department(s)
Physics, Astronomy, and Materials Science
Document Type
Article
DOI
https://doi.org/10.1016/j.jnoncrysol.2006.01.025
Keywords
Atomic force and scanning tunneling microscopy, Chemical vapor deposition, Crystal growth, Scanning electron microscopy, X-ray diffraction
Publication Date
6-15-2006
Recommended Citation
Middya, A. R., J-J. Liang, and K. Ghosh. "Synthesis of polycrystalline silicon thin films with ‘icosahedral’ symmetry by ceramics hot wire chemical vapor deposition." Journal of non-crystalline solids 352, no. 9-20 (2006): 1008-1010.
Journal Title
Journal of Non-Crystalline Solids
