Effect of low temperature annealing on high field magnetoresistance and hall effect in (Ga,Mn)As Dilute Magnetic Semiconductors

Authors

Kartik C. Ghosh, Missouri State UniversityFollow
Mohammad Arif, MSU Graduate Student
T. W. Kehl, Missouri State University
R. J. Patel, MSU JVIC-CASEFollow
S. R. Mishra
James G. Broerman, Missouri State UniversityFollow

Abstract

In this paper we report the effect of low temperature annealing on the high field magneto-transport properties of epitaxial thin films of (Ga,Mn)As Dilute Magnetic Semiconductor (DMS) with low concentration (1.5 %) of Mn doping, which results in a ferromagnetic insulator. Annealing at an optimal temperature enhances the conductivity, carrier concentration, and ferromagnetic transition temperature. The field dependence of magnetoresistance is different below and above the ferromagnetic transition temperature. An attempt is made to analyze the data using a theoretical model proposed by Kaminski and Das Sarma [1].

Department(s)

Physics, Astronomy, and Materials Science
JVIC-CASE

Document Type

Conference Proceeding

DOI

https://doi.org/10.1557/PROC-831-E3.21

Publication Date

8-25-2005

Recommended Citation

Ghosh, K., Mohammad Arif, T. Kehl, R. J. Patel, S. R. Mishra, and J. G. Broerman. "Effect of Low Temperature Annealing on High Field Magnetoresistance and Hall effect in (Ga, Mn) As Dilute Magnetic Semiconductors." MRS Online Proceedings Library 831, no. 1 (2004): 394-399.

Journal Title

Materials Research Society Symposium Proceedings