Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation
Abstract
Amorphous polyethersulfone (PES) films have been implanted with a variety of ions (He, B, C, N and As) at a bombarding energy of 50 keV in the dose range 1016-1017 ions/cm2. Surface resistance as a function of dose indicates a saturation effect with a significant difference between He and the other ions used. ESR line shapes in the He implanted samples changed from a mixed Gaussian/Lorentzian to a pure Lorentzian and narrowed with increasing dose. Temperature dependent resistivity indicates an electron hopping mechanism for conduction. Infrared results indicate cross-linking or self-cyclization occurred for all implanted ions with further destruction in the case of As. © 1991.
Department(s)
Physics, Astronomy, and Materials Science
Document Type
Article
DOI
https://doi.org/10.1016/0168-583X(91)95802-K
Publication Date
7-1-1991
Recommended Citation
Bridwell, Lynn B., R. E. Giedd, Wang Yongqiang, S. S. Mohite, Tamera Jahnke, and I. M. Brown. "Electrical conductivity enhancement of polyethersulfone (PES) by ion implantation." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 59 (1991): 1240-1244.
Journal Title
Nuclear Inst. and Methods in Physics Research, B
