Local structure surrounding implanted As+ ions in polysulfone films

Abstract

Results from As K-edge XAFS studies on polysulfone films implanted with 50 KeV As+ in the dose range of 1015 to 1016 ions/cm2 indicate that As reacts chemically with O atoms to form As-(3)O based molecular structures having As-O bond lengths equal to 1.81±0.02 angstrom. In comparison to samples implanted in the dose range 1015 to 1016 ions/cm2, the molecular environment surrounding As in polysulfone implanted at 1017 ions/cm2 has additional structure beyond the nearest-neighbor O atoms.

Department(s)

Physics, Astronomy, and Materials Science

Document Type

Conference Proceeding

DOI

https://doi.org/10.1557/PROC-321-113

Publication Date

1-1-1994

Journal Title

Materials Research Society Symposium Proceedings

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